DPG60C200QB low loss and soft recovery high performance fast recovery diode common cathode hiperfred2 1 2 3 part number DPG60C200QB backside: cathode fav rr tns 35 rrm 30 200 = v= v i= a 2x features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) to-3p industry standard outline compatible with to-247 rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20131126b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60C200QB n s 3 a t vj =c reverse recovery time a 7 35 55 n s i rm max. reverse recovery current i f =a; 30 25 t=125c vj -di f =a/s 200 /dt t rr v r =v 130 t vj =c 25 t=125c vj v = v symbol definition ratings typ. max. i r v i a v f 1.34 r 0.95 k/ w r min. 30 v rsm v 1 t = 25c vj t = c vj m a 0.1 v = v r t = 25c vj i = a f v t = c c 140 p tot 160 w t = 25c c r k/ w 30 200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 1.63 t = 25c vj 150 v f0 v 0.70 t = c vj 175 r f 10.5 m ? threshold voltage slope resistance for power loss calculation only a 150 v rrm v 200 max. repetitive reverse blocking voltage t = 25c vj c j 42 j unction capacitance v = v 150 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 360 a 200 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 200 0.25 ixys reserves the right to change limits, conditions and dimensions. 20131126b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60C200QB ratings product mar k i n g date code part no. logo ixys abcd assembly code zyyww assembly line d p g 60 c 200 qb part number diode hiperfred extreme fast common cathode to-3p (3) = = = dpf60c200hb to-247ad (3) 200 current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.2 mounting torque 0.8 t vj c 175 virtual junction temperature -55 weight g 5 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 i rms rms current 50 a per terminal 150 -55 dpf60c200hj isoplus247 (3) 200 to-3p similar part package voltage class dpg60c200hb to-247ad (3) 200 delivery mode quantity code no. part number marking on product ordering 1 ) DPG60C200QB 502213 tube 30 DPG60C200QB standard t stg c 150 storage temperature -55 threshold voltage v 0.7 m ? v 0 max r 0 max slope resistance * 7.9 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131126b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60C200QB 1 2 3 outlines to-3p ixys reserves the right to change limits, conditions and dimensions. 20131126b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60C200QB 0.0 0.4 0.8 1.2 1.6 2.0 10 20 30 40 50 60 70 80 0 200 400 600 30 40 50 60 70 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj i d - ] c [ f /dt [a/ s] t[ms] 0 200 400 600 0 100 200 300 400 500 600 0 2 4 6 8 10 12 0 200 400 600 2 4 6 8 10 12 14 16 0 200 400 600 0.1 0.2 0.3 0.4 q rr [ c] v f i d - ] v [ f /dt [a/ s] z thjc [k/w] i rm q rr v fr t fr fig. 1 forward current i f versus v f fig. 2 typ. reverse recov. charge q rr versus -di f /dt fig. 3 typ. reverse recov. current i rm versus -di f /dt fig. 4 typ. dynamic parameters q rr ,i rm versus t vj fig. 5 typ. reverse recov. time t rr versus -di f /dt fig. 6 typ. forward recov. voltage v fr and t fr versus di f /dt fig. 8 transient thermal impedance junction to case i f [a] -di f /dt [a/ s] i rm [a] t rr [ns] -di f /dt [a/ s] t fr [ns] v fr [v] 0200400600 2 4 6 8 10 12 14 e rec [ j] -di f /dt [a/ s] fig. 7 typ. recovery energy e rec versus -di f /dt i f =60 a 30 a 15 a t vj = 125c v r =130 v t vj = 125c v r =130v i f =60a 30 a 15 a t vj =125c v r = 130 v i f =60 a 30 a 15 a t vj = 125c v r =130 v i f = 30 a r thi [k/w] 0.1311 0.1377 0.3468 0.2394 0.095 t i [s] 0.0018 0.002 0.012 0.07 0.345 t vj = 125c v r = 130 v i f = 15 a 30 a 60 a t vj = 150c 25c fast diode ixys reserves the right to change limits, conditions and dimensions. 20131126b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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